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参数资料
| 型号： | 2SJ221-E |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 94K |
| 代理商： | 2SJ221-E |
2SJ221
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–50
0
–10
–20
–30
–40
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
0
–1–2–3–4–5
75°C
–25°C
120
0
40
80
050
100
150
VDS = –10 V
Pulse Test
–10 V
–8 V
–6 V
–5 V
–4 V
VGS = –3 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–30
–10
–3
–1
–0.3
–0.1
–1
–3
–10
–30
–100 –300 –1000
–100
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–10
0
–2
–4
–6
–8
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–20 A
–10 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.3
0.01
0.1
0.03
0.005
–3
–30
–0.1
–1
–10
–100
–0.3
5
3
VGS = –4 V
–10 V
Pulse Test
Tc = 25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ222 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ222-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ223L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-251VAR |
| 2SJ223S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ225 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
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