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参数资料
| 型号： | 2SJ221-E |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 6/9页 |
| 文件大小： | 94K |
| 代理商： | 2SJ221-E |
2SJ221
Rev.2.00 Sep 07, 2005 page 4 of 6
1.0
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.2
0.4
0.6
0.8
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Case Temperature
Pulse Test
–10 V
VGS = –4 V
ID = –20 A
–5 V, –10 A
–20 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
30
3
10
1
0.1
0.3
–0.1 –0.3
–1
–3
–10
–30
–100
Tc = 25°C
75°C
VDS = –10 V
Pulse Test
–25°C
Reverse Drain Current
IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.3
–1
–3
–10
–30
–100
5000
3000
1000
100
300
10
30
5
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate
to
Source
Voltage
V
GS
(V)
Dynamic Input Characteristics
20
40
60
80
100
VDS
VGS
ID = –20 A
5000
1000
3000
300
30
100
10
5
–0.3
–1
–3
–10
–30
–100
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching
Time
t
(ns)
Switching Characteristics
–5 V, –10 A
VDD = –10 V
–25 V
–50 V
VDD = –50 V
–25 V
–10 V
VGS = –10 V, VDD = –30 V
PW = 2
s, duty ≤ 1 %
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ222 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ222-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ223L | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-251VAR |
| 2SJ223S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252VAR |
| 2SJ225 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
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