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参数资料
| 型号： | 2SJ243 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 782K |
| 代理商： | 2SJ243 |
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MOS FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL MOS FET
FOR SWITCHING
DATA SHEET
Document No. D11215EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1996
PACKAGE DRAWING (Unit: mm)
0.3
1.6
±
0.1
0.8
±
0.1
2
0.2
+0.1
–0
0.5
1: Source
2: Gate
3: Drain
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15
+0.1
–0.05
+0.1
–0
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
The 2SJ243 is a P-channel vertical type MOS FET that is driven at
2.5 V.
Because this MOS FET can be driven on a low voltage and because it
is not necessary to consider the drive current, the 2SJ243 is ideal for
driving the actuator of power-saving systems, such as VCR cameras
and headphone stereo systems.
Moreover, the 2SJ243 is housed in a super small mini-mold package
so that it can help increase the mounting density on the printed circuit
board and lower the mounting cost, contributing to miniaturization of the
application systems.
FEATURES
Small mounting area: about 60% of the conventional mini-mold
package (SC-70)
Can be directly driven by 3-V IC
Can be automatically mounted
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ243
SC-75 (USM)
Marking: A1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m 7.0
V
Drain Current (DC)
ID(DC)
m 100
mA
Drain Current (pulse)
Note1
ID(pulse)
m 200
mA
Total Power Dissipation
Note2
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic substrate of 3.0 cm
2 x 0.64 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ244TR | SMALL SIGNAL, FET |
| 2SJ247-E | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ247 | 0.45 ohm, POWER, FET, TO-220AB |
| 2SJ255 | 10 A, 30 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220ML |
| 2SJ259 | 20 A, 30 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ243-T1(A) | 制造商:Renesas Electronics 功能描述:Pch -30V }100mA 25 SC75 制造商:Renesas Electronics 功能描述:Pch -30V }100mA 25 SC75 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SJ243-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,30V,0.1A,55ohm,USM3 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R |
| 2SJ244 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ244JYTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ244JYTR-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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