参数资料
型号: 2SJ243
元件分类: 小信号晶体管
英文描述: 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 4/7页
文件大小: 782K
代理商: 2SJ243
Data Sheet D11215EJ2V0DS
2
2SJ243
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
30 V, VGS = 0 V
1.0
A
Gate Leakage Current
IGSS
VGS = m 5.0 V, VDS = 0 V
m 0.1 m 3.0
A
Gate Cut-off Voltage
VGS(off)
VDS =
3.0 V, ID = 10
A
1.6
1.9
2.3
V
Forward Transfer Admittance
Note
| yfs |
VDS =
3.0 V, ID = 10 mA
20
30
mS
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
2.5 V, ID = 1.0 mA
55
100
RDS(on)2
VGS =
4.0 V, ID = 10 mA
20
25
Input Capacitance
Ciss
VDS = –5.0 V
16
pF
Output Capacitance
Coss
VGS = 0 V
13
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
2.0
pF
Turn-on Delay Time
td(on)
VDD =
5.0 V, ID = 10 mA
10
ns
Rise Time
tr
VGS =
5.0 V
40
ns
Turn-off Delay Time
td(off)
RG = 10
130
ns
Fall Time
tf
80
ns
Note Pulsed: PW
≤ 350
s, Duty Cycle 2%
TEST CIRCUIT SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS()
10%
90%
VGS
10%
0
ID()
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
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参数描述
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