参数资料
型号: 2SJ278
元件分类: 小信号晶体管
英文描述: SMALL SIGNAL, FET
封装: UPAK-3
文件页数: 2/8页
文件大小: 40K
代理商: 2SJ278
2SJ278
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–1
A
Drain peak current
I
D(pulse)*
1
–4
A
Body to drain diode reverse drain current
I
DR
–1
A
Channel dissipation
Pch*
2
1W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Value on the alumina ceramic board (12.5
×20×0.7 mm)
3. Marking is “MY”.
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——±5
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
–10
A
V
DS = –50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.25
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
0.7
0.83
I
D = –0.5 A, VGS = –10 V*
1
resistance
0.9
1.2
I
D = –0.5 A, VGS = –4 V*
1
Forward transfer admittance
|y
fs|
0.6
1.0
S
I
D = –0.5 A, VDS = –10 V*
1
Input capacitance
Ciss
160
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
80
pF
f = 1 MHz
Reverse transfer capacitance
Crss
28
pF
Turn-on delay time
t
d(on)
—7
—ns
I
D = –0.5 A, VGS = –10 V,
Rise time
t
r
—8
—ns
R
L = 60
Turn-off delay time
t
d(off)
—30
ns
Fall time
t
f
—25
ns
Body to drain diode forward
voltage
V
DF
–1.1
V
I
F = –1 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
90
ns
I
F = –1 A, VGS = 0,
di
F/dt = 50 A/s
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