参数资料
型号: 2SJ313
元件分类: JFETs
英文描述: 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件页数: 1/5页
文件大小: 242K
代理商: 2SJ313
2SJ313
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ313
Audio Frequency Power Amplifier Application
High breakdown voltage: VDSS = 180 V
High forward transfer admittance: |Yfs| = 0.7 S (typ.)
Complementary to 2SK2013
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
180
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 1)
ID
1
A
Power dissipation (Tc = 25°C)
PD
25
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相关代理商/技术参数
参数描述
2SJ313_07 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application
2SJ313_09 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Audio Frequency Power Amplifier Application
2SJ313O 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-220AB
2SJ313Y 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 1A I(D) | TO-220AB
2SJ313-Y(Q) 制造商:Toshiba 功能描述:Pch -180V -1A TO220NIS