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参数资料
| 型号： | 2SJ317TR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封装： | UPAK-3 |
| 文件页数： | 4/6页 |
| 文件大小： | 47K |
| 代理商： | 2SJ317TR |
20
10
5
2
1
0.5
0.2
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
V
= –5 V
Pulse test
DS
Ta = –25°C
75°C
25°C
Forward Transfer Admittance vs.
Drain Current
10
5
2
1
0.5
0.2
0.1
–0.1 –0.2
–0.5 –1.0
–2
–5
–10
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Pulse test
V
= –2 V
GS
–3 V
–4 V
Drain to Source on State Resistance
vs. Drain Current
–0.5
–0.4
–0.3
–0.2
–0.1
0–1
–2
–3
–4
–5
Gate to Source Voltage
V
(V)
GS
Drain
to
Source
Saturation
Voltage
DS(on)
I
= –1 A
D
Pulse test
–0.5 A
–0.2 A
–0.1 A
V
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
0.8
0.6
0.4
0.2
–25
0
25
50
75
100
Case Temperature
Tc (°C)
Drain
to
Source
on
State
Resistance
DS(on)
V
= –4 V
GS
Pulse test
–0.5 A
–1 A
I
= –2 A
R
(
)
0
V
= –2.5 V
GS
D
–1 A, –0.5A
I
= –2 A
D
Drain to Source on State Resintance
vs. Case Temperature
4
2SJ317
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PDF描述 |
|---|---|
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| 2SJ324-Z | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AB |
| 2SJ324 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SJ326-AZ | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ327 | 4000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ318(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-251AA |
| 2SJ318(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5A I(D) | TO-252AA |
| 2SJ318L | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ318S | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ319 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
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