- 您现在的位置：买卖IC网 > PDF目录33472 > 2SJ345 50 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 PDF资料下载
参数资料
| 型号： | 2SJ345 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | 2-3F1F, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 320K |
| 代理商： | 2SJ345 |
2SJ345
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ345
High Speed Switching Applications
Analog Switch Applications
Low threshold voltage: Vth = 0.5 to 1.5 V
High speed
Small package
Complementary to 2SK1828
Marking
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
7
V
DC drain current
ID
50
mA
Drain power dissipation
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 7 V, VDS = 0
1
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 100 μA, VGS = 0
20
V
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0
1
μA
Gate threshould voltage
Vth
VDS = 3 V, ID = 0.1 mA
0.5
1.5
V
Forward transfer admittance
Yfs
VDS = 3 V, ID = 10 mA
15
mS
Drain-source ON resistance
RDS (ON)
ID = 10 mA, VGS = 2.5 V
20
40
Ω
Input capacitance
Ciss
VDS = 3 V, VGS = 0, f = 1 MHz
10.4
pF
Reverse transfer capacitance
Crss
VDS = 3 V, VGS = 0, f = 1 MHz
2.8
pF
Output capacitance
Coss
VDS = 3 V, VGS = 0, f = 1 MHz
8.4
pF
Turn-on time
ton
VDD = 3 V, ID = 10 mA,
VGS = 0~2.5 V
0.15
Switching time
Turn-off time
toff
VDD = 3 V, ID = 10 mA,
VGS = 0~2.5 V
0.13
μs
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ347 | 50 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ350 | 0.9 ohm, POWER, FET |
| 2SJ352 | POWER, FET |
| 2SJ351 | POWER, FET |
| 2SJ353 | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ345_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| 2SJ346 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| 2SJ346_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High Speed Switching Applications |
| 2SJ347 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANAROG SWITCH APPLICATIONS) |
| 2SJ347(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 20V 0.05A 3-Pin SSM T/R |
发布紧急采购，3分钟左右您将得到回复。