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参数资料
| 型号： | 2SJ353-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/6页 |
| 文件大小： | 58K |
| 代理商： | 2SJ353-AZ |
2SJ353
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = –60 V, VGS = 0
–10
A
Gate Leakage Current
IGSS
VGS = –16/+10 V, VDS = 0
±10
A
Gate Cut-Off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.6
–2.0
V
Forward Transfer Admittance
|yfs|VDS = –10 V, ID = –1.0 A
1.0
S
Drain to Source On-State Resistance
RDS(on)1
VGS = –4 V, ID = –0.8 A
0.58
0.68
Drain to Source On-State Resistance
RDS(on)2
VGS = –10 V, ID = –1.0 A
0.33
0.37
Input Capacitance
Ciss
VDS = –10 V, VGS = 0,
320
pF
Output Capacitance
Coss
f = 1.0 MHz
200
pF
Reverse Transfer Capacitance
Crss
70
pF
Turn-On Delay Time
td(on)
VDD = –30 V, ID = –1.0 A
5
ns
Rise Time
tr
VGS(on) = –10 V,
15
ns
Turn-Off Delay Time
td(off)
RG = 10
, RL = 30
40
ns
Fall Time
tf
20
ns
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PDF描述 |
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| 2SJ355-T1-AZ | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ355-T2-AZ | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ360 | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ362TP-FA | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ355 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH SWITCHING |
| 2SJ355-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ355-T1(AZ) | 制造商:Renesas Electronics 功能描述:Pch -30V }2A 0.35 SOT89 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ355-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ356 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
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