参数资料
型号: 2SJ353-AZ
元件分类: 小信号晶体管
英文描述: 1500 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件页数: 4/6页
文件大小: 58K
代理商: 2SJ353-AZ
2SJ353
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.01
1
0.8
0.6
0.4
0.2
0
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
1
0.8
0.6
0.4
0.2
VGS - Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
–1
1 000
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
–0.1
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
ISD
-
Diode
Forward
Current
-
A
–10
–1
–0.1
–0.01
–0.001
VSD - Source to Drain Voltage - V
–0.1
–1
–10
–2
–5
–100
–10
–0.2
–0.5
–1
–2
–5
1.2
VGS = –10 V
TA = 75 C
25 C
–25 C
–4
–8
–12
–16
–20
ID = –0.8 A
–1.0 A
500
200
100
50
20
10
–10
–20
–50
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
50
20
10
5
2
1
VDD = –30 V
VGS(on) = –10 V
RG = 10
tf
td(off)
tf
td(on)
0.2
0.4
0.6
0.8
1
相关PDF资料
PDF描述
2SJ355-T1-AZ 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ355-T2-AZ 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ360 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ362TP-FA 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ362 2 A, 60 V, 0.6 ohm, P-CHANNEL, Si, POWER, FET
相关代理商/技术参数
参数描述
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2SJ355-T1-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R
2SJ356 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING