参数资料
型号: 2SJ355-T2-AZ
元件分类: JFETs
英文描述: 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 3/6页
文件大小: 64K
代理商: 2SJ355-T2-AZ
2SJ355
3
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.001
0.6
0.4
0.2
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
-Drain
to
Source
On-State
Resistance
-
0
1
0.8
0.6
0.4
0.2
VGS = –10 V
Pulsed
–10
–0.01
–0.1
–1
TA = 75 C
TA = 25 C
TA = 150 C
TA = 0 C
TA = –25 C
–20
–2
–4
–6
–8 –10 –12 –14 –16 –18
Pulsed
ID = 2.0 A
ID = 1.0 A
ID - Drain Current - A
VGS - Gate to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
ID
-
Drain
Current
-
A
0
–5
–4
–3
–2
–1
VDS - Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
ID
-
Drain
Current
-
A
–1
–10
–1
–0.1
–0.01
–0.001
–0.0001
–0.00001
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
–0.0001
10
1
0.1
0.01
0.001
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
–0.001
1
0.8
0.6
0.4
0.2
0
ID - Drain Current - A
Pulsed
–10
V
–4.5
V
–4.0 V
–3.5 V
–3.0 V
–2.5 V
VGS = –2.0 V
–2
–3
–4
TA = 150 C
VDS = –10 V
Pulsed
TA = –25 C
TA = 0 C
TA = 25 C
TA = 75 C
VDS = –10 V
Pulsed
–1
–0.001
–0.01
–0.1
TA = 150 C
TA = 0 C
TA = –25 C
TA = 25 C
TA = 75 C
TA = 150 C
–10
–0.01
–0.1
–1
TA = 75 C
TA = 25 C
TA = 0 C
TA = –25 C
–1
–2
–3
–4
–5
VGS = –4 V
Pulsed
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相关代理商/技术参数
参数描述
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