参数资料
型号: 2SJ355-T2-AZ
元件分类: JFETs
英文描述: 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT PACKAGE-3
文件页数: 4/6页
文件大小: 64K
代理商: 2SJ355-T2-AZ
2SJ355
4
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(j-a)
-
Transient
Thermal
Resistance
-
C/
W
1 m
1 000
100
10
1
PW - Pulse Width -s
1
10 m
100 m
10
100
Single Pulse
Using ceramic board
of 7.5 cm2
× 0.7 mm
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
ISD
-
Diode
Forward
Current
-
A
–0.2
–10
–1
–0.1
–0.01
–0.001
–0.0001
VSD - Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
–1
10 000
1 000
100
10
VDS - Drain to Source Voltage- V
SWITCHING CHARACTERISTICS
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-ns
–0.1
1 000
100
10
0
ID - Drain Current -A
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
trr
-
Reverse
Recovery
Time
-
ns
–0.1
1 000
100
10
IF - Diode Forward Current - A
–1.2
–0.4
–0.6
–0.8
–1.0
VGS = 0
Pulsed
Ciss
Coss
Crss
–100
–10
VGS = 0
f = 1 MHz
–10
–1
tf
td(off)
td(on)
tr
VDD = 25 V
VGS(on) = –10 V
–10
–0.5
–1
–5
VGS = 0
di/dt = 50 A/ s
相关PDF资料
PDF描述
2SJ360 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ362TP-FA 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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2SJ366-4101 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
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