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参数资料
| 型号： | 2SJ355 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/6页 |
| 文件大小： | 67K |
| 代理商： | 2SJ355 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ355
P-CHANNEL MOS FET
FOR HIGH SWITCHING
Document No. D11217EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.6 ±0.2
4.5 ±0.1
0.42
±0.06
0.8
MIN.
1.5
0.42
±0.06
0.47
±0.06
3.0
2.5
±0.1
4.0
±0.25
0.41
+0.03
–0.05
1.5 ±0.1
S
D
G
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Source
Drain
Gate
Marking: PQ
The 2SJ355 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
Can be directly driven by 5-V IC
Low ON resistance
RDS(on) = 0.60
MAX. @VGS = –4 V, ID = –1.0 A
RDS(on) = 0.35
MAX. @VGS = –10 V, ID = –1.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
–30
V
Gate to Source Voltage
VGSS
VDS = 0
–20/+10
V
Drain Current (DC)
ID(DC)
±2.0
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10 ms
±4.0
A
Duty cycle
≤ 1 %
Total Power Dissipation
PT
16 cm2
× 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
The information in this document is subject to change without notice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ355-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ355-T1(AZ) | 制造商:Renesas Electronics 功能描述:Pch -30V }2A 0.35 SOT89 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ355-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ356 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ356-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) SC-62 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
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