- 您现在的位置：买卖IC网 > PDF目录49988 > 2SJ355 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ355 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 30 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/6页 |
| 文件大小： | 67K |
| 代理商： | 2SJ355 |
2SJ355
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = –30 V, VGS = 0
–10
A
Gate Leakage Current
IGSS
VGS = –16/+10 V, VDS = 0
±10
A
Gate Cut-Off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.5
–2.0
V
Forward Transfer Admittance
|yfs|VDS = –10 V, ID = –1.0 A
1.0
S
Drain to Source On-State Resistance
RDS(on)1
VGS = –4 V, ID = –1.0 A
0.50
0.60
Drain to Source On-State Resistance
RDS(on)2
VGS = –10 V, ID = –1.0 A
0.26
0.35
Input Capacitance
Ciss
VDS = –10 V, VGS = 0,
300
pF
Output Capacitance
Coss
f = 1.0 MHz
245
pF
Reverse Transfer Capacitance
Crss
120
pF
Turn-On Delay Time
td(on)
VDD = –25 V, ID = –1.0 A
5.5
ns
Rise Time
tr
VGS(on) = –10 V
32
ns
Turn-Off Delay Time
td(off)
RG = 10
, RL = 25
110
ns
Fall Time
tf
130
ns
Gate Input Charge
QG
VDS = –24 V,
12.2
nC
Gate to Source Charge
QGS
VGS = –10 V,
1.2
nC
Gate to Drain Charge
QGD
ID = –1.8 A, IG = –2 mA
4.6
nC
Internal Diode Reverse Recovery Time
trr
IF = 2.0 A,
95
ns
Internal Diode Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
85
nC
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Derating
Factor
-
%
0
100
80
60
40
20
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
ID
-
Drain
Current
-
A
–0.5
–10
VDS - Drain to Source Voltage - V
25
50
75
100
125
150
–5
–2
–1
–0.5
–0.2
–0.1
–0.05
–100
–1
–2
–5
–10
–20
–50
PW
=
100
ms
10
ms
1 ms
DC
Single pulse
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ359TP | 5 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SK1915TE24R | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1915TE24L | 6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1721TE24R | 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2228TP | 5 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ355-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ355-T1(AZ) | 制造商:Renesas Electronics 功能描述:Pch -30V }2A 0.35 SOT89 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ355-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 2A 4-Pin(3+Tab) SC-62 T/R |
| 2SJ356 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 2SJ356-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 2A 4-Pin(3+Tab) SC-62 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
发布紧急采购，3分钟左右您将得到回复。