参数资料
型号: 2SJ377(2-7J1B)
元件分类: JFETs
英文描述: 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-7J1B, SC-64, 3 PIN
文件页数: 1/6页
文件大小: 408K
代理商: 2SJ377(2-7J1B)
2SJ377
2009-07-13
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L
2
πMOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain-source ON-resistance
: RDS (ON) = 0.16 (typ.)
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 k)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
273
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
0.6 MAX.
2.3
6.8 MAX.
0.95 MAX.
0.6
± 0.15
5.
5
±
0.2
1.
7
±
0.2
12
.0
MIN.
2.5
M
A
X
.
1.1
±
0.
2
5.2
± 0.2
1
2
3
2.3
1. GATE
2. DRAIN
HEAT SINK)
3. SOURSE
3
2
1
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
1.1
± 0.2
0.1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.3
1.
2
MA
X
.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.5
±
0.
2
0.6
± 0.15
2.3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
HEAT SINK)
3. SOURSE
3
2
1
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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