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参数资料
| 型号： | 2SJ377(2-7J1B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7J1B, SC-64, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 408K |
| 代理商： | 2SJ377(2-7J1B) |
2SJ377
2009-07-13
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 2.5 A
—
0.24
0.28
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.16
0.19
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.0
—
S
Input capacitance
Ciss
—
630
—
Reverse transfer capacitance
Crss
—
95
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
290
—
pF
Rise time
tr
—
25
—
Turn-on time
ton
—
45
—
Fall time
tf
—
55
—
Switching time
Turn-off time
toff
—
200
—
ns
Total gate charge (Gate-source
plus gate-drain)
Qg
—
22
—
Gate-source charge
Qgs
—
16
—
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
—
6
—
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
80
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dlDR / dt = 50 A / μS
—
0.1
—
μC
Marking
J377
Lot No.
Note 4
Part No.
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
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相关代理商/技术参数 |
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