参数资料
型号: 2SJ378
元件分类: JFETs
英文描述: 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: LEAD FREE, 2-8M1B, 3 PIN
文件页数: 2/6页
文件大小: 395K
代理商: 2SJ378
2SJ378
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 2.5 A
0.24
0.28
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
0.16
0.19
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.0
S
Input capacitance
Ciss
630
Reverse transfer capacitance
Crss
95
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
290
pF
Rise time
tr
25
Turnon time
ton
45
Fall time
tf
55
Switching time
Turnoff time
toff
200
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
22
Gatesource charge
Qgs
16
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
6
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
80
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dlDR / dt = 50 A / μS
0.1
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
J378
Lot No.
Note 4
Part No. (or abbreviation code)
相关PDF资料
PDF描述
2SJ383TP 8000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ402(2-10S2B) 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ410-E 6 A, 200 V, 0.85 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ411 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ411-AZ 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
2SJ378(TP,Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 5A TPS
2SJ378_07 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Relay Drive, DC−DC Converter and Motor Drive Applications
2SJ378_09 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Relay Drive, DC−DC Converter and Motor Drive Applications
2SJ378TP 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 5A 3PIN TPS - Tape and Reel
2SJ380 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 100V 12A 3PIN SC-67 - Rail/Tube