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参数资料
| 型号： | 2SJ386 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | TO-92MOD, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 36K |
| 代理商： | 2SJ386 |
2SJ386
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–30
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–3
A
Drain peak current
I
D(pulse)*
1
–5
A
Body to drain diode reverse drain current
I
DR
–3
A
Channel dissipation
Pch
0.9
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW 10 s, duty cycle 1 %
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–30
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–10
A
V
DS = –24 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.5
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
—
0.3
0.4
I
D = –2 A
V
GS = –10 V*
1
—
0.55
0.8
I
D = –2 A
V
GS = –4 V*
1
Forward transfer admittance
|y
fs|
1.0
1.7
—
S
I
D = –1 A
V
DS = –10 V*
1
Input capacitance
Ciss
—
177
—
pF
V
DS = –10 V
Output capacitance
Coss
—
120
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
59
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—8
—ns
I
D = –2 A
Rise time
t
r
—
28
—
ns
V
GS = –10 V
Turn-off delay time
t
d(off)
—
45
—
ns
R
L = 15
Fall time
t
f
—60—ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ386TZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ387 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ387L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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