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参数资料
| 型号： | 2SJ451ZK-TR-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-59A, MPAK-3 |
| 文件页数： | 1/7页 |
| 文件大小： | 111K |
| 代理商： | 2SJ451ZK-TR-E |
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 1 of 6
2SJ451
Silicon P Channel MOS FET
REJ03G0864-0400
Rev.4.00
Sep 07, 2007
Description
Low frequency power switching
Features
Low on-resistance.
Low drive power
2.5 V gate drive device.
Small package (MPAK).
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
1. Source
2. Gate
3. Drain
D
S
G
1
2
3
Note: Marking is “ZK–”.
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–20
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–0.2
A
Drain peak current
ID (pulse)
Note 1
–0.4
A
Channel dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 s, duty cycle ≤ 1%
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| 2SJ452 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
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