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参数资料
| 型号： | 2SJ451ZK-TR-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-59A, MPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 111K |
| 代理商： | 2SJ451ZK-TR-E |
2SJ451
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 2 of 6
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–20
—
V
ID = –100
A, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Zero gate voltage drain current
IDSS
—
–1.0
A
VDS = –16 V, VGS = 0
Gate to source leak current
IGSS
—
±2.0
A
VGS =
±16 V, VDS = 0
Gate to source cutoff voltage
VGS (off)
–0.5
—
–1.5
V
ID = –10
A, VDS = –5 V
RDS (on) 1
—
2.3
3.5
ID = –100 mA, VGS = –4 V
Note 2
Static drain to source on state resistance
RDS (on) 2
—
5.0
9.0
ID = –40 mA, VGS = –2.5 V
Note 2
Forward transfer admittance
|yfs|
0.13
0.23
—
S
ID = –100 mA, VDS = –10 V
Note 2
Input capacitance
Ciss
—
2.4
—
pF
Output capacitance
Coss
—
31
—
pF
Reverse transfer capacitance
Crss
—
0.6
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
170
—
ns
Rise time
tr
—
680
—
ns
Turn-off delay time
td (off)
—
3.0
—
s
Fall time
tf
—
2.8
—
s
ID = –0.1 A
VGS = –10 V
RL = 100
Note:
2. Pulse test
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相关代理商/技术参数 |
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|---|---|
| 2SJ452 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ453 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251 |
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