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参数资料
| 型号： | 2SJ451ZK-TR-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-59A, MPAK-3 |
| 文件页数： | 3/7页 |
| 文件大小： | 111K |
| 代理商： | 2SJ451ZK-TR-E |
2SJ451
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(mW)
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–0.20
0
–0.04
–0.08
–0.12
–0.16
0–2
–4
–6
–8
–10
–0.20
0
–0.04
–0.08
–0.12
–0.16
0–1
–2
–3
–4
–5
Tc = 75°C
25°C
–25°C
200
0
50
100
150
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–4 V
–2.5 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–0.3
–0.1
–0.03
–0.003
–0.01
–0.001
–0.1
–0.3
–1
–3
–10
–30
–100
–1
Ta = 25°C
PW
=
10
ms
DC
Operation
1 ms
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
0
–0.2
–0.4
–0.6
–0.8
0
–2
–4
–6
–8
–10
Pulse Test
ID = –0.2 A
–0.05 A
–0.1 A
Drain Current
ID (A)
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
20
10
2
5
1
–0.05
–0.2
–0.5
–0.01
–0.1
–1
–0.02
100
50
VGS = –2.5 V
–4 V
Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ452 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ453 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251 |
| 2SJ453TP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251VAR |
| 2SJ453TP-FA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-252VAR |
| 2SJ454 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D) |
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