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参数资料
| 型号： | 2SJ451ZK-TR-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-59A, MPAK-3 |
| 文件页数： | 4/7页 |
| 文件大小： | 111K |
| 代理商： | 2SJ451ZK-TR-E |
2SJ451
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 4 of 6
10
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
2
4
6
8
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
–4 V
VGS = –2.5 V
ID = –0.05 A
–0.05 A, –0.1 A
–0.2 A
–0.1 A
Forward
Transfer
Admittance
|y
fs
|
(S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
2
0.5
0.2
0.1
1
0.02
0.05
0.01
0.002
0.005
–0.01
–0.03 –0.1 –0.3
–1
–3
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
0
–10
–20
–30
–40
–50
Capacitance
C
(pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
100
30
10
3
1
0.3
0.1
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
10
5
2
0.5
1
0.2
0.1
–0.1
–0.02
–0.05
–0.2
–0.5
–1
–0.01
tf
tr
td(off)
td(on)
Switching
Time
t
(
s)
Drain Current
ID (A)
Switching Characteristics
–0.5
0
–0.1
–0.2
–0.3
–0.4
0
Source to Drain Voltage
VSD
(V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
–5 V
VGS = 0
VGS = –10 V, VDD = –10 V
PW = 50
s, duty ≤ 1 %
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ452 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ453 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251 |
| 2SJ453TP | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-251VAR |
| 2SJ453TP-FA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 3A I(D) | TO-252VAR |
| 2SJ454 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D) |
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