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参数资料
| 型号： | 2SJ387STL-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 20 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 88K |
| 代理商： | 2SJ387STL-E |
2SJ387(L), 2SJ387(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–20
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
–10
A
Drain peak current
ID (pulse)
Note 1
–40
A
Body to drain diode reverse drain current
IDR
–10
A
Channel dissipation
Pch
Note 2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–20
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±10
—
V
IG =
±200 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±6.5 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–100
A
VDS = –16 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–0.5
—
–1.5
V
ID = –1 mA, VDS = –10 V
RDS (on)
—
0.05
0.07
ID = –5 A, VGS = –4 V
Note 3
Static drain to source on state resistance
RDS (on)
—
0.07
0.1
ID = –5 A, VGS = –2.5 V
Note 3
Forward transfer admittance
|yfs|
7
12
—
S
ID = –5 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
1170
—
pF
Output capacitance
Coss
—
860
—
pF
Reverse transfer capacitance
Crss
—
310
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
20
—
ns
Rise time
tr
—
325
—
ns
Turn-off delay time
td (off)
—
350
—
ns
Fall time
tf
—
425
—
ns
ID = –5 A
VGS = –4 V
RL = 2
Body to drain diode forward voltage
VDF
—
–1.0
—
V
IF = –10 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
240
—
ns
IF = –10 A, VGS = 0
diF/dt = 20 A/
s
Note:
3. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ387S | 10 A, 20 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ388(L) | 0.2 ohm, POWER, FET |
| 2SJ388(L) | 0.2 ohm, POWER, FET |
| 2SJ388(S) | 0.2 ohm, POWER, FET |
| 2SJ389L | 10 A, 60 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ388(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-251AA |
| 2SJ388(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252AA |
| 2SJ388L | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ388S | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ389 | 制造商:HITACHI-METALS 制造商全称:Hitachi Metals, Ltd 功能描述:Silicon P Channel MOS FET |
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