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参数资料
| 型号： | 2SJ387STL-E |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 20 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-63, DPAK-3 |
| 文件页数： | 3/8页 |
| 文件大小： | 88K |
| 代理商： | 2SJ387STL-E |
2SJ387(L), 2SJ387(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0–2
–4
–6
–8
–10
0
–2
–4
–6
–8
0
–1–2–3–4
–5
40
0
10
20
30
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–2.5 V
–5 V
–4V
–2 V
VGS = –1.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–30
–10
–3
–1
–0.1
–0.3
–0.5
–1
–2
–5
–10
–20
–50
–100
Ta = 25°C
10
s
100
s
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
0
–0.1
–0.2
–0.3
–0.4
0
–2
–4
–6
–8
–10
Pulse Test
ID = –5 A
–1 A
–2 A
Drain Current
ID (A)
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–1
–10
–0.5
–2
–5
–20
–50
1
0.5
Pulse Test
VGS = –2.5 V
–4 V
25°C
75°C
Tc = –25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ387S | 10 A, 20 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ388(L) | 0.2 ohm, POWER, FET |
| 2SJ388(L) | 0.2 ohm, POWER, FET |
| 2SJ388(S) | 0.2 ohm, POWER, FET |
| 2SJ389L | 10 A, 60 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ388(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-251AA |
| 2SJ388(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-252AA |
| 2SJ388L | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ388S | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ389 | 制造商:HITACHI-METALS 制造商全称:Hitachi Metals, Ltd 功能描述:Silicon P Channel MOS FET |
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