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参数资料
| 型号： | 2SJ402(2-10S1B) |
| 元件分类： | JFETs |
| 英文描述： | 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 2/6页 |
| 文件大小： | 436K |
| 代理商： | 2SJ402(2-10S1B) |
2SJ402
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 15 A
—
46
60
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 15 A
—
29
38
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 15 A
14
23
—
S
Input capacitance
Ciss
—
3300
—
Reverse transfer capacitance
Crss
—
460
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1450
—
pF
Rise time
tr
—
20
—
Turnon time
ton
—
25
—
Fall time
tf
—
35
—
Switching time
Turnoff time
toff
—
130
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
110
—
Gatesource charge
Qgs
—
75
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 30 A
—
35
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
30
A
Pulse drain reverse current
(Note 1)
IDRP
—
120
A
Forward voltage (diode)
VDSF
IDR = 30 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
100
—
ns
Reverse recovery charge
Qrr
IDR = 30 A, VGS = 0 V
dlDR / dt = 50 A / μS
—
0.16
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
J402
Part No. (or abbreviation code)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ402SM(Q) | 制造商:Toshiba 功能描述:Cut Tape |
| 2SJ403 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB |
| 2SJ404 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB |
| 2SJ405 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-220AB |
| 2SJ406 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P- Channel Silicon MOS FET Very High-Speed Switching Applications |
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