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参数资料
| 型号： | 2SJ410 |
| 元件分类： | JFETs |
| 英文描述： | 0.85 ohm, POWER, FET |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 27K |
| 代理商： | 2SJ410 |
2SJ410
Silicon P-Channel MOS FET
ADE-208-539
1st. Edition
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter and motor driver
Outline
1
2 3
TO-220FM
1. Gate
2. Drain
3. Source
D
G
S
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PDF描述 |
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| 2SJ336TL | 2 A, 12 V, 0.35 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 2SK2316(KP)TD | 2 A, 20 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2439TL | 12 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 2SK2437(KQ)TD | 2 A, 30 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ410-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ411 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL SIGNAL MOS FET FOR SWITCHING |
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
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