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参数资料
| 型号： | 2SJ410 |
| 元件分类： | JFETs |
| 英文描述： | 0.85 ohm, POWER, FET |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 27K |
| 代理商： | 2SJ410 |
2SJ410
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–200
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–250
AV
DS =–160 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–2.0
—
–4.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
resistance
R
DS(on)
—
0.7
0.85
I
D = –3 A
V
GS = –10 V*
1
Forward transfer admittance
|y
fs|
2.0
3.2
—
S
I
D = –3 A
V
DS = –10 V*
1
Input capacitance
Ciss
—
900
—
pF
V
DS = –10 V
Output capacitance
Coss
—
280
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
65
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
18
—
ns
I
D = –3 A
Rise time
t
r
—
50
—
ns
V
GS = –10 V
Turn-off delay time
t
d(off)
—
90
—
ns
R
L = 6
Fall time
t
f
—40—ns
Body to drain diode forward
voltage
V
DF
—
–1.0
—
V
I
F = –6 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
220
—
ns
I
F = –6 A, VGS = 0,
diF/dt = 50 A/
s
Note:
1. Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ410-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ411 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL SIGNAL MOS FET FOR SWITCHING |
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
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