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参数资料
| 型号： | 2SJ407 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 413K |
| 代理商： | 2SJ407 |
2SJ407
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 200 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
—
3.5
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
—
0.8
1.0
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.0
—
S
Input capacitance
Ciss
—
800
—
Reverse transfer capacitance
Crss
—
80
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
270
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
30
—
Fall time
tf
—
6
—
Switching time
Turnoff time
toff
—
65
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
20
—
Gatesource charge
Qgs
—
13
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 160 V, VGS = 10 V, ID = 5 A
—
7
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
—
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
—
2.0
V
Reverse recovery time
trr
—
210
—
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
1.2
—
μC
Marking
Lot No.
Note 4
J407
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ407(F) | 功能描述:MOSFET MOSFET P-Ch 200V 5A Rdson 1 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ407_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SJ407_09 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SJ408(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 50A I(D) | SOT-199VAR |
| 2SJ408(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 50A I(D) | D3PAK |
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