参数资料
型号: 2SJ410-E
元件分类: JFETs
英文描述: 6 A, 200 V, 0.85 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: LEAD FREE, SC-67, TO-220FM, 3 PIN
文件页数: 1/5页
文件大小: 153K
代理商: 2SJ410-E
Rev.3.00 Jun 05, 2006 page 1 of 4
2SJ410
Silicon P Channel MOS FET
REJ03G0863-0300
Rev.3.00
Jun 05, 2006
Description
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
1. Gate
2. Drain
3. Source
D
G
S
1
2 3
相关PDF资料
PDF描述
2SJ414 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ449 6 A, 250 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ453(TP) 3000 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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2SJ492-ZJ 20 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
相关代理商/技术参数
参数描述
2SJ411 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL SIGNAL MOS FET FOR SWITCHING
2SJ412 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SJ412 (SM;Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM
2SJ412(Q) 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL
2SJ412(SM,Q) 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube