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参数资料
| 型号： | 2SJ410-E |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 200 V, 0.85 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, SC-67, TO-220FM, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 153K |
| 代理商： | 2SJ410-E |
2SJ410
Rev.3.00 Jun 05, 2006 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–6
A
Drain peak current
ID (pulse)
Note 1
–24
A
Body to drain diode reverse drain current
IDR
–6
A
Channel dissipation
Pch
Note 2
30
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–200
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
–250
A
VDS = –160 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–2.0
—
–4.0
V
ID = –1 mA, VDS = –10 V
Static drain to source on state resistance
RDS (on)
—
0.7
0.85
ID = –3 A, VGS = –10 V
Note 3
Forward transfer admittance
|yfs|
2.0
3.2
—
S
ID = –3 A, VDS = –10 V
Note 3
Input capacitance
Ciss
—
900
—
pF
Output capacitance
Coss
—
280
—
pF
Reverse transfer capacitance
Crss
—
65
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
—
18
—
ns
Rise time
tr
—
50
—
ns
Turn-off delay time
td (off)
—
90
—
ns
Fall time
tf
—
40
—
ns
ID = –3 A
VGS = –10 V
RL = 10
Body to drain diode forward voltage
VDF
—
–1.0
—
V
IF = –6 A, VGS = 0
Body to drain diode reverse recovery time
trr
—
220
—
ns
IF = –6 A, VGS = 0
diF/dt = 50 A/
s
Note:
3. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ411 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL SIGNAL MOS FET FOR SWITCHING |
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
| 2SJ412(SM,Q) | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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