参数资料
型号: 2SJ492-S-AZ
元件分类: JFETs
英文描述: 20 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: TO-262, 3 PIN
文件页数: 2/4页
文件大小: 72K
代理商: 2SJ492-S-AZ
Data Sheet D11264EJ1V0DS00
2
2SJ492
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
RDS(on)1
VGS = –10 V, ID = –10 A
70
100
m
RDS(on)2
VGS = –4 V, ID = –10 A
120
185
m
Gate to Source Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.5
–2.0
V
Forward Transfer Admittance
| yfs |VDS = –10 V, ID = –10 A
5.0
12
S
Drain Leakage Current
IDSS
VDS = –60 V, VGS = 0 V
–10
A
Gate to Source Leakage Current
IGSS
VGS =
# 20 V, VDS = 0 V
# 10
A
Input Capacitance
Ciss
VDS = –10 V
1210
pF
Output Capacitance
Coss
VGS = 0 V
520
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
180
pF
Turn-on Delay Time
td(on)
ID = –10 A16
ns
Rise Time
tr
VGS(on) = –10 V
140
ns
Turn-off Delay Time
td(off)
VDD = –30 V90
ns
Fall Time
tf
RG = 10
80
ns
Total Gate Charge
QG
ID = –20 A42
nC
Gate to Source Charge
QGS
VDD = –48 V8.0
nC
Gate to Drain Charge
QGD
VGS = –10 V10
nC
Body Diode Forward Voltage
VF(S-D)
IF = –20 A, VGS = 0 V1.0
V
Reverse Recovery Time
trr
IF = –20 A, VGS = 0 V
125
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A /
s
280
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25
50
PG
L
VDD
VGS = –20
→ 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
90 %
VGS(on)
90 %
td(off)
tf
10 %
ID
toff
TEST CIRCUIT 2 SWITCHING TIME
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
td(on)
tr
τ
RG = 10
0
ton
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