参数资料
型号: 2SJ492-S-AZ
元件分类: JFETs
英文描述: 20 A, 60 V, 0.185 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装: TO-262, 3 PIN
文件页数: 3/4页
文件大小: 72K
代理商: 2SJ492-S-AZ
Data Sheet D11264EJ1V0DS00
3
2SJ492
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature -
°C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature -
°C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100
120
140
160
35
30
25
20
15
10
5
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
1
0.1
10
100
1000
1
10
100
TC = 25C
Single Pulse
1 ms
10
ms
ID(pulse)
R
DS(on)
Limited
(at
V
GS
=10
V)
100
s
Power
Dissipation
Limited
DC
ID(DC)
P
w =
10
s
100ms
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
8
12
16
80
100
4
Pulsed
VGS =
10 V
60
40
20
4 V
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
1
10
100
1000
Pulsed
0
5
10
Tch =
25C
125C
15
VDS =
10 V
20
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