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参数资料
| 型号： | 2SJ527(S) |
| 文件页数： | 8/12页 |
| 文件大小： | 60K |
| 代理商： | 2SJ527(S) |
2SJ527(L),2SJ527(S)
5
–5
–4
–3
–2
–1
0
–4
–8
–12
–16
–20
10
1
–0.1
–0.3
–1
–3
–10
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
0
3
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
W
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
W
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
I
= –5 A
D
–1 A
–2 A
0.1
0.3
–1 A
I
= –4 A
D
10
1
–0.1 –0.2
–0.5
–1
–2
–5
–10
2
5
0.1
0.2
0.5
25 °C
Tc = –25 °C
75 °C
V
= –10 V
Pulse Test
DS
–30
V
= –10 V
GS
–4 V
Pulse Test
–5 A
–2 A
V
= –4 V
GS
–1, –2 A
–10 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ527S-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK(S) |
| 2SJ527STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ527STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ528 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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