参数资料
型号: 2SJ527S
元件分类: JFETs
英文描述: 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: DPAK-3
文件页数: 14/14页
文件大小: 76K
代理商: 2SJ527S
2SJ527(L),2SJ527(S)
7
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50
Vin
–15 V
0
I D
VDS
I AP
V(BR)DSS
L
VDD
E
=
L I
2
1
V
– V
AR
AP
DSS
DD
2
2.5
2.0
1.5
1.0
0.5
25
50
75
100
125
150
0
I
= –5 A
V
= –25 V
duty < 0.1 %
Rg > 50
AP
DD
–5
–4
–3
–2
–1
0
–0.4
–0.8
–1.2
–1.6
–2.0
V
= 0 V
GS
–10 V
Pulse Test
–5 V
Repetitive
Avalanche
Energy
E
(mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
Avalanche Test Circuit
Avalanche Waveform
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (°C)
相关PDF资料
PDF描述
2SJ527STL-E 5 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ528L-E 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ528STL-E 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ528L 7 A, 60 V, 0.37 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ531 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SJ527S-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK(S)
2SJ527STL-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ527STR-E 制造商:Renesas Electronics Corporation 功能描述:
2SJ528 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching