参数资料
型号: 2SJ529(L)
元件分类: JFETs
英文描述: 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: DPAK-3
文件页数: 6/12页
文件大小: 58K
代理商: 2SJ529(L)
2SJ529(L),2SJ529(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
–60
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage
V
(BR)GSS
±20
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
0.12
0.16
I
D = –5A, VGS = –10V
Note4
resistance
R
DS(on)
0.17
0.24
I
D = –5A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
4.5
7.5
S
I
D = –5A, VDS = –10V
Note4
Input capacitance
Ciss
580
pF
V
DS = –10V
Output capacitance
Coss
300
pF
V
GS = 0
Reverse transfer capacitance
Crss
85
pF
f = 1MHz
Turn-on delay time
t
d(on)
10
ns
V
GS = –10V, ID = –5A
Rise time
t
r
40
ns
R
L = 6
Turn-off delay time
t
d(off)
—85
ns
Fall time
t
f
—60
ns
Body–drain diode forward voltage
V
DF
–1.2
V
I
F = –10A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
60
ns
I
F = –10A, VGS = 0
diF/ dt = 50A/s
Note:
4. Pulse test
相关PDF资料
PDF描述
2SJ529(S) 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ529S 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ529L 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ529S-E 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ530L-E 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
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