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参数资料
| 型号： | 2SJ529(L) |
| 元件分类： | JFETs |
| 英文描述： | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 7/12页 |
| 文件大小： | 58K |
| 代理商： | 2SJ529(L) |
2SJ529(L),2SJ529(S)
4
Main Characteristics
40
30
20
10
0
50
100
150
200
–10
–8
–6
–4
–2
0
–2
–4
–6
–8
–10
–5 V
–4 V
0
–1–2–3
–4
–5
–10 V
–3.5 V
–3 V
–10
–8
–6
–4
–2
–2.5 V
–25 °C
25 °C
Tc = 75 °C
V
= –2 V
GS
DS
Pulse Test
V
= –10 V
–0.1
–0.3
–1
–3
–10
–30
–100
–20
–10
–2
–1
–0.2
–0.1
1 ms
Ta = 25 °C
100
s
10
s
–0.5
–5
–50
PW
=
10
ms
(1
shot)
DC
Operation
(Tc=25
)
Pulse Test
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ529(S) | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529S | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529L | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ529S-E | 10 A, 60 V, 0.24 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ530L-E | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ529L-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) DPAK(L)-(2) T/R |
| 2SJ529S | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:Hight Speed Power Switching |
| 2SJ529S-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 10A 3-Pin(2+Tab) DPAK(S) Bulk |
| 2SJ529STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ529STR-E | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:0 |
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