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参数资料
| 型号： | 2SJ530S-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 10/13页 |
| 文件大小： | 73K |
| 代理商： | 2SJ530S-E |
2SJ530(L),2SJ530(S)
4
Main Characteristics
40
30
20
10
0
50
100
150
200
–100
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
–1
–3
–10
–20
–16
–12
–8
–4
0
–2
–4
–6
–8
–10
0
–1–2–3
–4
–5
–30
–100
–1000
–300
–3.5 V
–3 V
–20
–16
–12
–8
–4
–25 °C
25 °C
Tc = 75 °C
–10 V
–6 V
–5 V
100
s
1 ms
Ta = 25 °C
10 s
DS
Pulse Test
V
= –10 V
–4 V
V
= –2.5 V
GS
Pulse Test
PW
=
10
ms
(1
shot)
DC
Operation
(Tc=25
)
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R DS(on)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ539-E | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ540 | 0.23 ohm, POWER, FET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ530STL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape |
| 2SJ531 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ531-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220CFM Magazine |
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