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参数资料
| 型号： | 2SJ530S-E |
| 元件分类： | JFETs |
| 英文描述： | 15 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 11/13页 |
| 文件大小： | 73K |
| 代理商： | 2SJ530S-E |
2SJ530(L),2SJ530(S)
5
500
200
100
20
50
10
5
–0.1
–0.3
–3
0
–10
–20
–30
–40
–50
5000
1000
300
100
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
816
24
32
40
1000
100
300
30
3
10
1
–0.1
–0.3
–1
–3
–10 –20
–1
–10
30
10
V
= 0
f = 1 MHz
GS
Ciss
Crss
Coss
DS
V
GS
V
D
I
= –15 A
V
= –10 V
–25 V
–50 V
DD
V
= –50 V
–25 V
–10 V
DD
t f
r
t
d(off)
t
d(on)
t
DD
V
= –10 V, V
= –30 V
Pw = 5
s, duty < 1 %
GS
di / dt = 50 A /
s
V
= 0, Ta = 25
°C
GS
–20
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
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PDF描述 |
|---|---|
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ535 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ539-E | 10 A, 60 V, 0.36 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ540 | 0.23 ohm, POWER, FET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ530STL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape |
| 2SJ531 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ531-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ532-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220CFM Magazine |
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