参数资料
型号: 2SJ543
元件分类: JFETs
英文描述: 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 4/10页
文件大小: 49K
代理商: 2SJ543
2SJ543
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
0.042
0.055
I
D = –10A, VGS = –10V
Note4
resistance
R
DS(on)
0.065
0.095
I
D = –10A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1016—
S
I
D = –10A, VDS = –10V
Note4
Input capacitance
Ciss
1750
pF
V
DS = –10V
Output capacitance
Coss
800
pF
V
GS = 0
Reverse transfer capacitance
Crss
180
pF
f = 1MHz
Turn-on delay time
t
d(on)
16
ns
V
GS = –10V, ID = –10A
Rise time
t
r
100
ns
R
L = 3
Turn-off delay time
t
d(off)
230
ns
Fall time
t
f
140
ns
Body–drain diode forward voltage
V
DF
–1.0
V
I
F = –20A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
100
ns
I
F = –20A, VGS = 0
diF/ dt =50A/s
Note:
4. Pulse test
相关PDF资料
PDF描述
2SJ544 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ544 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ544 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ546-E 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相关代理商/技术参数
参数描述
2SJ543(E) 制造商:Renesas Electronics 功能描述:Cut Tape
2SJ543-E 制造商:Renesas Electronics Corporation 功能描述:
2SJ544 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ544-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220AB Box
2SJ545 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET