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参数资料
| 型号： | 2SJ543 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 49K |
| 代理商： | 2SJ543 |
2SJ543
6
0
–10
–20
–30
–40
–50
10000
3000
1000
300
100
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
16
32
48
64
80
1000
200
500
100
20
50
10
–0.1
–0.3
–1
–10
–30
–100
30
10
DS
V
GS
V
= –10 V
–25 V
–50 V
DD
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
V
= –10 V
–25 V
–50 V
DD
–0.1
–0.3
–1
–3
–10
–30
–100
1000
500
200
100
50
20
10
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
D
I
= –20 A
–3
td(on)
td(off)
tr
tf
V
= –10 V, V
= –30 V
PW = 10 s, duty < 1 %
GS
DD
Pulse Test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ544 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ544 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ544 | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ546-E | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ546-E | 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ543(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SJ543-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ544 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ544-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) TO-220AB Box |
| 2SJ545 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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