参数资料
型号: 2SJ546
元件分类: JFETs
英文描述: 0.155 ohm, POWER, FET
封装: TO-220CFM, 3 PIN
文件页数: 1/10页
文件大小: 50K
代理商: 2SJ546
2SJ546
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-638A (Z)
2nd. Edition
Jul. 1998
Features
Low on-resistance
R
DS(on) = 0.075 typ.
Low drive current.
4V gate drive devices.
High speed switching.
Outline
1
2
3
1. Gate
2. Drain
3. Source
TO–220CFM
D
G
S
相关PDF资料
PDF描述
2SJ548 15 A, 60 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SJ551L-E 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ551STL-E 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ555-E 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ556 0.055 ohm, POWER, FET
相关代理商/技术参数
参数描述
2SJ546(E) 制造商:Renesas Electronics Corporation 功能描述:
2SJ546-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ547 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching
2SJ547-E 制造商:Renesas Electronics Corporation 功能描述:
2SJ548 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching