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参数资料
| 型号： | 2SJ551L-E |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 1/9页 |
| 文件大小： | 95K |
| 代理商： | 2SJ551L-E |
Rev.4.00 Sep 07, 2005 page 1 of 8
2SJ551(L), 2SJ551(S)
Silicon P Channel MOS FET
REJ03G0898-0400
(Previous: ADE-208-647B)
Rev.4.00
Sep 07, 2005
Description
High speed power switching
Features
Low on-resistance
RDS (on) = 0.050 typ.
Low drive current.
4 V gate drive devices.
High speed switching.
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
1
2
3
4
1
2
3
4
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ551STL-E | 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ555-E | 60 A, 60 V, 0.036 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ556 | 0.055 ohm, POWER, FET |
| 2SJ556 | 0.055 ohm, POWER, FET |
| 2SJ557A | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ551S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ551STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ552 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ552(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-262AA |
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