参数资料
型号: 2SJ551L-E
元件分类: JFETs
英文描述: 18 A, 60 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: LDPAK-3
文件页数: 3/9页
文件大小: 95K
代理商: 2SJ551L-E
2SJ551(L), 2SJ551(S)
Rev.4.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0–2
–4
–6
–8
–10
–20
0
–4
–8
–12
–16
0
–1–2–3–4–5
Tc = 75°C
80
0
20
40
60
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–6 V
–4 V
–3.5 V
–2.5 V
–3 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
10
100
30
300
3
0.3
1
0.1
0.3
1
3
10
30
100
1000
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–3.0
0
–0.5
–1.0
–1.5
–2.0
–2.5
0
–4
–8
–12
–16
–20
Pulse Test
ID = –20 A
–10 A
–5 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–2
–20
–50
–1
–10
–5
–100
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
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