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参数资料
| 型号： | 2SJ551(L) |
| 文件页数： | 5/12页 |
| 文件大小： | 62K |
| 代理商： | 2SJ551(L) |
2SJ550(L),2SJ550(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–15
A
Drain peak current
I
D(pulse)
Note1
–60
A
Body-drain diode reverse drain current
I
DR
–15
A
Avalanche current
I
AP
Note3
–15
A
Avalanche energy
E
AR
Note3
19
mJ
Channel dissipation
Pch
Note2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
≥ 50
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ551(S) | |
| 2SJ552(L) | |
| 2SJ552(S) | |
| 2SJ553(L) | |
| 2SJ553(S) | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ551-L(E) | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box |
| 2SJ551L-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) DPAK(L) Box Tray |
| 2SJ551S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ551STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ552 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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