- 您现在的位置：买卖IC网 > PDF目录142672 > 2SJ552L 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ552L |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 10/14页 |
| 文件大小： | 79K |
| 代理商： | 2SJ552L |
2SJ552(L),2SJ552(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.042
0.055
I
D = –10A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.065
0.095
I
D = –10A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1016—
S
I
D = –10A, VDS = –10V
Note4
Input capacitance
Ciss
—
1750
—
pF
V
DS = –10V
Output capacitance
Coss
—
800
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
180
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
16
—
ns
V
GS = –10V, ID = –10A
Rise time
t
r
—
100
—
ns
R
L = 3
Turn-off delay time
t
d(off)
—
230
—
ns
Fall time
t
f
—
140
—
ns
Body–drain diode forward voltage
V
DF
—
–1.0
—
V
I
F = –20A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = –20A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ552S | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553S-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553L | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2N2891SMD | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
| 2SK2735L | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ552L-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) LDPAK(L) Box Bulk |
| 2SJ552S | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ552STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ553 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR |
发布紧急采购，3分钟左右您将得到回复。