参数资料
型号: 2SJ552L
元件分类: JFETs
英文描述: 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: LDPAK-3
文件页数: 13/14页
文件大小: 79K
代理商: 2SJ552L
2SJ552(L),2SJ552(S)
6
0
–10
–20
–30
–40
–50
10000
3000
1000
300
100
0
–20
–40
–60
–80
0
–4
–8
–12
–16
–20
–100
16
32
48
64
80
1000
200
500
100
20
50
10
–0.1
–0.3
–1
–10
–30
–100
30
10
DS
V
GS
V
= –10 V
–25 V
–50 V
DD
V
= 0
f = 1 MHz
GS
Ciss
Coss
Crss
V
= –10 V
–25 V
–50 V
DD
–0.1
–0.3
–1
–3
–10
–30
–100
1000
500
200
100
50
20
10
di / dt = 50 A / s
V
= 0, Ta = 25 °C
GS
Capacitance
C
(pF)
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Drain
to
Source
Voltage
V
(V)
DS
Gate
to
Source
Voltage
V
(V)
GS
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching
Time
t
(ns)
Switching Characteristics
Reverse Drain Current
I
(A)
DR
Reverse
Recovery
Time
trr
(ns)
Body–Drain Diode Reverse
Recovery Time
D
I
= –20 A
–3
td(on)
td(off)
tr
tf
V
= –10 V, V
= –30 V
PW = 10 s, duty < 1 %
GS
DD
Pulse Test
相关PDF资料
PDF描述
2SJ552S 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ553S-E 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET
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2N2891SMD 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB
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相关代理商/技术参数
参数描述
2SJ552L-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) LDPAK(L) Box Bulk
2SJ552S 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching
2SJ552STL-E 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET
2SJ553 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching
2SJ553(L) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR