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参数资料
| 型号： | 2SJ552S |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 11/14页 |
| 文件大小： | 79K |
| 代理商： | 2SJ552S |
2SJ552(L),2SJ552(S)
4
Main Characteristics
80
60
40
20
0
50
100
150
200
–100
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
–1
–3
–10
–50
–40
–30
–20
–10
0
–2
–4
–6
–8
–10
–6 V
–4 V
0
–1–2–3
–4
–5
–30
–100
–1000
–300
–10 V
–4.5 V
–3 V
–50
–40
–30
–20
–10
10 s
1 ms
Ta = 25 °C
–3.5 V
25 °C
DS
V
= –10 V
Pulse Test
Operation in
this area is
limited by R DS(on)
100
s
PW
=
10
ms
(1
shot)
–8 V
–5 V
Tc = –25 °C
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Typical Output Characteristics
Gate to Source Voltage
V
(V)
GS
Drain
Current
I
(A)
D
Typical Transfer Characteristics
Pulse Test
V
= –2.5 V
GS
75 °C
DC
Operation
(Tc
=
25
°C)
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PDF描述 |
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| 2N2891SMD | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
| 2SK2735L | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2735S | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ552STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ553 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR |
| 2SJ553(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263VAR |
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