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参数资料
| 型号： | 2SJ552S |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 60 V, 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LDPAK-3 |
| 文件页数： | 12/14页 |
| 文件大小： | 79K |
| 代理商： | 2SJ552S |
2SJ552(L),2SJ552(S)
5
–2.0
–1.6
–1.2
–0.8
–0.4
0
–4
–8
–12
–16
–20
0.2
0.16
0.12
0.08
0.04
–40
0
40
80
120
160
0
–10 V
GS
V
= –4 V
1
0.5
0.05
0.02
0.01
–1
–2
–10
–20
–100
–50
–5 A
0.2
0.1
Pulse Test
–0.1
–1
–10
–100
–0.3
–3
–30
100
10
0.1
1
0.3
3
30
25 °C
Tc = –25 °C
75 °C
DS
V
= –10 V
Pulse Test
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(°C)
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
–2 A
I
= –20 A
D
–10 A
–5
–5 A
I
= –20 A
D
–5, –10 A
–20 A
–10 A
–10 V
V
= –4 V
GS
Pulse Test
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PDF描述 |
|---|---|
| 2SJ553S-E | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ553L | 30 A, 60 V, 0.055 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2N2891SMD | 2000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-276AB |
| 2SK2735L | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2735S | 20 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ552STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ553 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553(L) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR |
| 2SJ553(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263VAR |
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