- 您现在的位置：买卖IC网 > PDF目录48160 > 2SJ557 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ557 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | SC-96, 3 PIN |
| 文件页数： | 5/10页 |
| 文件大小： | 190K |
| 代理商： | 2SJ557 |
Data Sheet D13292EJ2V0DS
2
2SJ557
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
IDSS
VDS = –30 V, VGS = 0 V
–10
A
Gate Leakage Current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Gate Cut-off Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.7
–2.5
V
Forward Transfer Admittance
| yfs |VDS = –10 V, ID = –1.5 A1
2.5
S
Drain to Source On-state Resistance
RDS(on)1
VGS = –10 V, ID = –1.0 A
114
155
m
RDS(on)2
VGS = –4.5 V, ID = –1.0 A
178
255
m
RDS(on)3
VGS = –4.0 V, ID = –1.0 A
212
290
m
Input Capacitance
Ciss
VDS = –10 V
312
pF
Output Capacitance
Coss
VGS = 0 V
117
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
56
pF
Turn-on Delay Time
td(on)
VDD = –10 V12
ns
Rise Time
tr
ID = –1.0 A7
ns
Turn-off Delay Time
td(off)
VGS(on) = –10 V
133
ns
Fall Time
tf
RG = 10
85
ns
Total Gate Charge
QG
VDD= –10 V2.8
nC
Gate to Source Charge
QGS
ID = –2.5 A1.0
nC
Gate to Drain Charge
QGD
VGS = –4.0 V1.2
nC
Diode Forward Voltage
VF(S-D)
IF = 2.5 A, VGS = 0 V0.84
V
Reverse Recovery Time
trr
IF = 2.5 A, VGS = 0 V28
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A /
s7.8
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
RG
0
VGS
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
90 %
VGS(on)
10 %
0
ID
90 %
td(on)
tr
td(off)
tf
10 %
τ
RG = 10
ID
0
ton
toff
PG.
50
D.U.T.
RL
VDD
IG = 2 mA
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ575 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ624-A | 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ649 | 20 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1065-4 | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 2SK1197 | POWER, FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ557-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 2.5A 3-Pin SC-96 T/R Cut Tape |
| 2SJ559 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SJ56 | 制造商:TT Electronics / Semelab 功能描述:MOSFET P-Ch 200V 8A High Speed TO-3 |
| 2SJ560 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SJ561 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
发布紧急采购，3分钟左右您将得到回复。