参数资料
型号: 2SK1197
元件分类: JFETs
英文描述: POWER, FET
封装: TO-126MOD, 3 PIN
文件页数: 1/5页
文件大小: 18K
代理商: 2SK1197
2SK1197
Silicon N-Channel enhanced MOS FET
Application
High frequency amplifier
Features
High endurance capability against static electrical breakdown (C = 200pF)
— Between Gate from Source : 500 V Typ
— Between Drain from Source : 1000 V Min, 1500 V Typ
Wide forward transfer admittance
|y
fs| = 150 mS Typ
High breakdown voltage
V
DSS = 100V
Small output capacitance (Coss ≤ 10 pF)
Outline
1
2
3
TO-126 MOD
1. Drain
2. Source
3. Gate
S
G
D
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